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| IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 100 4.8 100 PG-TO262-3-1 V m A Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB100N10S3-05 IPI100N10S3-05 IPP100N10S3-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN1005 3PN1005 3PN1005 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=50A Value 100 100 400 1445 100 20 300 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=240A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=100A V GS=10V, I D=100A, SMD version 100 2.0 3.0 0.01 4.0 1 A V 0.5 62 62 40 K/W Values typ. max. Unit - 1 4.3 4.0 100 100 5.1 4.8 nA m Rev. 1.0 page 2 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25C V GS=0V, I F=80A, T j=25C V R=50V, I F=I S, di F/dt =100A/s 0.6 1 100 400 1.2 V A Q gs Q gd Qg V plateau V DD=80 V, I D=100 A, V GS=0 to 10 V 47 34 135 5.5 61 51 176 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=3.5 V GS=0V, V DS=25V, f =1MHz 8900 2520 220 34 17 60 20 11570 pF 3276 330 ns Values typ. max. Unit Reverse recovery time2) t rr - 108 - ns Reverse recovery charge2) 1) Q rr - 380 - nC Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 165A at 25C. For detailed information see Application Note ANPS071E 2) 3) Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V; SMD 300 100 250 80 200 P tot [W] 150 I D [A] 0 50 100 150 200 60 40 100 20 50 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 10 s 100 s 100 0.5 100 1 ms Z thJC [K/W] I D [A] 10-1 0.1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 400 10 V 7V 6.5 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 9 360 320 280 240 8 6V 7 5.5 V R DS(on) [m] I D [A] 200 160 120 80 40 0 0 1 2 3 4 5 5V 5.5 V 6 6V 5 6.5 V 7V 4 10 V 3 0 20 40 60 80 100 120 140 160 180 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 350 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD 8.5 300 7.5 250 6.5 200 R DS(on) [m] 175 C 25 C -55 C I D [A] 5.5 150 100 4.5 50 3.5 0 3 4 5 6 7 2.5 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 104 C [pF] Ciss V GS(th) [V] 3 1200 A 240 A Coss 2.5 103 2 Crss 1.5 -60 -20 20 60 100 140 180 102 101 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S= f(t AV) parameter: T j(start) 1000 102 100 25 C 100 C 150 C 175 C 175 C 25 C 25 C 101 I AV [A] 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 0.1 1 10 I F [A] 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 13 Typical avalanche energy E AS = f(T j) parameter: I D 3500 115 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 3000 25 A 110 2500 E AS [mJ] 2000 1500 V BR(DSS) [V] 105 50 A 100 1000 100 A 95 500 0 25 75 125 175 90 -55 -15 25 65 105 145 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 9 20 V 80 V 16 Gate charge waveforms V GS Qg 8 7 6 V GS [V] 5 4 3 2 V g s(th) Q g (th) 1 0 0 20 40 60 80 100 120 140 Q sw Q gs Q gd Q gate Q gate [nC] Rev. 1.0 page 7 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Revision History Version Date Changes Rev. 1.0 page 9 2008-02-11 |
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